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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Nexperia USA Inc. | MOSFET N-CH 100V 75A TO220AB | Tube | TO-220AB | Through Hole | TrenchMOS™ | -55°C ~ 175°C (TJ) | |
| NXP USA Inc. | MOSFET N-CH 60V 54A TO220AB | Tube | TO-220AB | Through Hole | TrenchMOS™ | -55°C ~ 175°C (TJ) | |
![]() BUK95150-55A,127 $0.28 | Nexperia USA Inc. | PFET, 13A I(D), 55V, 0.161OHM, 1 | Tube | TO-220AB | Through Hole | TrenchMOS™ | -55°C ~ 175°C (TJ) |
![]() BUK9516-55A,127 $0.54 | Nexperia USA Inc. | PFET, 66A I(D), 55V, 0.017OHM, 1 | Tube | TO-220AB | Through Hole | TrenchMOS™ | -55°C ~ 175°C (TJ) |
![]() BUK9516-75B,127 $0.60 | Nexperia USA Inc. | PFET, 67A I(D), 75V, 0.018OHM, 1 | Tube | TO-220AB | Through Hole | TrenchMOS™ | -55°C ~ 175°C (TJ) |
| NXP USA Inc. | MOSFET N-CH 55V 57A TO220AB | Tube | TO-220AB | Through Hole | TrenchMOS™ | -55°C ~ 175°C (TJ) | |
| Nexperia USA Inc. | MOSFET N-CH 55V 61A TO220AB | Tube | TO-220AB | Through Hole | TrenchMOS™ | -55°C ~ 175°C (TJ) | |
![]() BUK95180-100A,127 $0.31 | Nexperia USA Inc. | MOSFET N-CH 100V 11A TO220AB | Bulk | TO-220AB | Through Hole | TrenchMOS™ | -55°C ~ 175°C (TJ) |

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