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MMIX4B20N300View Product
IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Microchip Technology | IC POWER MODULE SMD | Tray | - | - | * | - | |
| Microchip Technology | IC POWER MODULE SMD | Tray | - | - | * | - | |
 CP10TD1-24A $18.90 | Powerex Inc. | IGBT MODULE 1200V 10A 96W | Bulk | - | Through Hole | - | -20°C ~ 150°C (TJ) |
CP15TD1-24A $21.11 | Powerex Inc. | IGBT MODULE 1200V 15A 113W | Bulk | - | Through Hole | - | -20°C ~ 150°C (TJ) |
CP20TD1-12A $21.89 | Powerex Inc. | IGBT MODULE 600V 20A 96W | Bulk | - | Through Hole | - | -20°C ~ 150°C (TJ) |
CP25TD1-24A $30.18 | Powerex Inc. | IGBT MODULE 1200V 25A 138W | Bulk | - | Through Hole | - | -20°C ~ 150°C (TJ) |
CP30TD1-12A $27.02 | Powerex Inc. | IGBT MODULE 600V 30A 114W | Bulk | - | Through Hole | - | -20°C ~ 150°C (TJ) |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 8.8A 23W IMS-2 | Bulk | IMS-2 | Through Hole | - | -40°C ~ 150°C (TJ) |
