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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() DD800S17K3B2NOSA1 $615.38 | Infineon Technologies | DD800S17 - IGBT MODULE | Bulk | - | - | * | - |
![]() DD800S17K6CB2NOSA1 $1,311.20 | Infineon Technologies | DD800S17 - IGBT MODULE | Bulk | - | - | * | - |
| Infineon Technologies | IGBT MOD 600V 25A 83.5W | Bulk | Module | Chassis Mount | - | -40°C ~ 125°C | |
![]() DDB2U50N08W1RB11BPSA1 $20.00 | Infineon Technologies | LOW POWER EASY | Tray | - | - | - | - |
| Infineon Technologies | IGBT MODULE | Tray | Module | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT MOD 1200V 50A 350W | Tray | Module | Chassis Mount | - | -40°C ~ 150°C | |
| Infineon Technologies | LOW POWER ECONO AG-ECONO2A-211 | Tray | AG-ECONO2A | Chassis Mount | - | 150°C (TJ) | |
![]() DDB6U104N16RRB37BPSA1 $56.96 | Infineon Technologies | LOW POWER ECONO AG-ECONO2B-411 | Tray | AG-ECONO2B | Chassis Mount | - | 150°C (TJ) |
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