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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() DDB6U30N08VRBOMA1 $11.95 | Infineon Technologies | IGBT MOD 600V 26A 83.5W | Bulk,Bulk | Module | Chassis Mount | - | -40°C ~ 125°C |
![]() DDB6U50N16W1RBPSA1 $30.97 | Infineon Technologies | LOW POWER EASY | Tray | AG-EASY1B | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() DDB6U50N16W1RPB11BPSA1 $33.97 | Infineon Technologies | LOW POWER EASY | Tray | AG-EASY1B | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() DDB6U50N16W1RPBPSA1 $34.41 | Infineon Technologies | LOW POWER EASY AG-EASY1B-711 | Tray | AG-EASY1B | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() DDB6U50N22W1RPB11BPSA1 $34.46 | Infineon Technologies | EASY BRIDGE MODULE | Tray | - | - | - | - |
![]() DDB6U75N16W1RB11BOMA1 $21.18 | Infineon Technologies | IGBT MOD 1200V 69A 335W | Tray | Module | Chassis Mount | EasyBRIDGE | -40°C ~ 150°C |
![]() DDB6U75N16W1RBOMA1 $31.26 | Infineon Technologies | IGBT MOD 1200V 69A 335W | Tray | Module | Chassis Mount | - | -40°C ~ 150°C |
| Infineon Technologies | IGBT MOD 1200V 50A 350W | Bulk | Module | Chassis Mount | - | 150°C (TJ) |
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