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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() DDB6U84N16RRBPSA1 $109.58 | Infineon Technologies | LOW POWER ECONO AG-ECONO2A-211 | Tray | AG-ECONO2A | Chassis Mount | - | 150°C (TJ) |
![]() DF1000R17IE4BOSA1 $406.93 | Infineon Technologies | IGBT MODULE 1700V 6250W | Bulk,Tray | Module | Chassis Mount | PrimePACK™3 | -40°C ~ 150°C |
![]() DF1000R17IE4DB2BOSA1 $447.99 | Infineon Technologies | DF1000R17IE4D_B2 - 1700 V, 1000 | Bulk | - | - | * | - |
![]() DF1000R17IE4PBPSA1 $429.52 | Infineon Technologies | PP, IHM I, XHP 1,7KV | Bulk | AG-PRIME3-1 | Chassis Mount | PrimePACK™3 | -40°C ~ 150°C (TJ) |
![]() DF100R07W1H5FPB53BPSA1 $30.44 | Infineon Technologies | IGBT MODULE | Bulk | AG-EASY1B | Chassis Mount | EasyPACK™ | -40°C ~ 150°C (TJ) |
![]() DF100R07W1H5FPB53BPSA2 $33.90 | Infineon Technologies | IGBT MOD 650V 40A 20MW | Bulk,Tray | Module | Chassis Mount | EasyPACK™ | -40°C ~ 150°C |
![]() DF100R07W1H5FPB54BPSA2 $33.90 | Infineon Technologies | IGBT MOD 650V 40A 20MW | Bulk,Tray | Module | Chassis Mount | EasyPACK™ | -40°C ~ 150°C (TJ) |
![]() DF120R12W2H3B27BOMA1 $39.65 | Infineon Technologies | IGBT MOD 1200V 50A 180W | Bulk,Tray | Module | Chassis Mount | - | -40°C ~ 150°C |
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