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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() DF450R12N2E4PB11BPSA1 $122.30 | Infineon Technologies | LOW POWER ECONO | Bulk | - | - | * | - |
![]() DF450R17N2E4PB11BDLA1 $83.27 | Infineon Technologies | LOW POWER ECONO | Bulk | - | - | * | - |
![]() DF450R17N2E4PB11BPSA1 $104.68 | Infineon Technologies | IGBT MODULE LOW POWER ECONO | Bulk | - | - | - | - |
![]() DF600R12IP4DBOSA1 $298.35 | Infineon Technologies | IGBT MOD 1200V 600A 3350W | Bulk,Tray | Module | Chassis Mount | PrimePACK™2 | -40°C ~ 150°C |
![]() DF600R12IP4DVBOSA1 $354.25 | Infineon Technologies | IGBT MODULE VCES 1200V 600A | Tray | - | - | PrimePACK™2 | - |
![]() DF600R12N2E4PB11BPSA1 $65.97 | Infineon Technologies | IGBT MODULE LOW POWER ECONO | Tray | - | - | - | - |
![]() DF650R17IE4BOSA1 $294.78 | Infineon Technologies | IGBT MOD 1700V 930A 4150W | Bulk,Tray | Module | Chassis Mount | PrimePACK™2 | -40°C ~ 150°C |
![]() DF650R17IE4PB60BPSA1 $316.37 | Infineon Technologies | PP IHM I | Tray | Module | Chassis Mount | - | -40°C ~ 150°C (TJ) |
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FS13MR12W2M1HC55BPSA1View Product
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MMIX1X200N60B3H1View Product
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