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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Infineon Technologies | IGBT MOD 1200V 30A 20MW | Tray | Module | Chassis Mount | EasyPACK™ | -40°C ~ 150°C | |
![]() DF225R12W2H3FB11BPSA1 $69.86 | Infineon Technologies | LOW POWER EASY AG-EASY2B-2 | Tray | - | - | - | - |
![]() DF300R07PE4B6BOSA1 $101.12 | Infineon Technologies | DFXR07P - IGBT MODULE | Bulk | - | - | * | - |
![]() DF300R07W2H3B77BPSA1 $58.78 | Infineon Technologies | LOW POWER EASY AG-EASY2B-411 | Tray | AG-EASY2B | Chassis Mount | EasyPACK™ | -40°C ~ 150°C (TJ) |
![]() DF300R12KE3HOSA1 $103.58 | Infineon Technologies | MEDIUM POWER 62MM | Bulk | - | - | * | - |
![]() DF400R07PE4RB6BOSA1 $123.40 | Infineon Technologies | IGBT MODULE | Bulk | AG-ECONO4-1-1 | Chassis Mount | EconoPACK™4 | -40°C ~ 150°C (TJ) |
![]() DF400R07W2S5FB77BPSA1 $56.06 | Infineon Technologies | LOW POWER EASY | Tray | - | - | - | - |
![]() DF400R12KE3HOSA1 $112.83 | Infineon Technologies | IGBT MOD 1200V 580A 2000W | Bulk,Tray | Module | Chassis Mount | C | -40°C ~ 125°C |
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