IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select products	Mfr	Description	Package	Supplier Device Package	Mounting Type	Series	Operating Temperature
CPV362M4K	Vishay General Semiconductor - Diodes Division	IGBT MODULE 600V 5.7A 23W IMS-2	Bulk	IMS-2	Through Hole	-	-40°C ~ 150°C (TJ)
CPV362M4U	Vishay General Semiconductor - Diodes Division	IGBT MODULE 600V 7.2A 23W IMS-2	Bulk	IMS-2	Through Hole	-	-40°C ~ 150°C (TJ)
CPV363M4F $17.43	Vishay General Semiconductor - Diodes Division	IGBT MODULE 600V 16A 36W IMS-2	-	IMS-2	Through Hole	-	-40°C ~ 150°C (TJ)
CPV363M4K	Vishay General Semiconductor - Diodes Division	IGBT MODULE 600V 11A 36W IMS-2	Bulk	IMS-2	Through Hole	-	-40°C ~ 150°C (TJ)
CPV363M4U	Vishay General Semiconductor - Diodes Division	IGBT MODULE 600V 13A 36W IMS-2	Bulk	IMS-2	Through Hole	-	-40°C ~ 150°C (TJ)
CPV364M4F $30.11	Vishay General Semiconductor - Diodes Division	IGBT MODULE 600V 27A 63W IMS-2	-	IMS-2	Through Hole	-	-40°C ~ 150°C (TJ)
CPV364M4U	Vishay General Semiconductor - Diodes Division	IGBT MODULE 600V 20A 63W IMS-2	Bulk	IMS-2	Through Hole	-	-40°C ~ 150°C (TJ)
CSM350KN $86.14	IXYS	DISC IGBT XPT-GENX3 TO-264(3)	Bulk	-	-	-	-