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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() F3L400R12PT4B26BOSA1 $141.57 | Infineon Technologies | IGBT MOD 1200V 600A 2150W | Tray | Module | Chassis Mount | EconoPACK™ 4 | -40°C ~ 150°C |
![]() F3L400R12PT4PB26BOSA1 $150.78 | Infineon Technologies | IGBT MOD 1200V 800A 20MW | Bulk,Tray | Module | Chassis Mount | EconoPACK™ 4 | -40°C ~ 150°C |
![]() F3L420R12W3H7H21BPSA1 $71.76 | Infineon Technologies | F3L420R12W3H7H21BPSA1 | Tray | - | Chassis Mount | EasyPACK™ | -40°C ~ 175°C (TJ) |
![]() F3L420R12W4H7H11BPSA1 $151.60 | Infineon Technologies | F3L420R12W4H7H11BPSA1 | Tray | - | Chassis Mount | EasyPACK™ | -40°C ~ 175°C (TJ) |
![]() F3L500R12W3H7H11BPSA1 $108.84 | Infineon Technologies | F3L500R12W3H7H11BPSA1 | Tray | - | Chassis Mount | EasyPACK™ | -40°C ~ 175°C (TJ) |
![]() F3L500R12W3H7H20BPSA1 $94.46 | Infineon Technologies | F3L500R12W3H7H20BPSA1 | Tray | - | - | - | - |
![]() F3L50R06W1E3B11BOMA1 $23.24 | Infineon Technologies | IGBT MODULE 600V 75A 175W | Tray | Module | Chassis Mount | EasyPACK™ | -40°C ~ 150°C |
![]() F3L600R10W3S7B11BPSA1 $112.81 | Infineon Technologies | LOW POWER EASY | Tray | - | - | - | - |
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