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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesLOW POWER ECONOBulk,Tray--EconoPACK™ 3-
Infineon TechnologiesLOW POWER ECONO AG-ECONO3B-411TrayAG-ECONO3BChassis MountEconoPACK™3-40°C ~ 150°C (TJ)
Infineon TechnologiesLOW POWER EASYTray----
Infineon TechnologiesIGBT MOD 600V 180A 570WTrayModuleChassis Mount--40°C ~ 125°C
Infineon TechnologiesLOW POWER ECONOBulk--*-
Infineon TechnologiesLOW POWER ECONO AG-ECONO3B-411Tray--*-
Infineon TechnologiesIGBT MODULE 1700V 230ATrayModuleChassis MountEconoDUAL™ 3-40°C ~ 150°C
Infineon TechnologiesMEDIUM POWER ECONO AG-ECONOD-311TrayAG-ECONOD-6Chassis MountEconoDUAL™ 3-40°C ~ 150°C (TJ)
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