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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() F3L300R07PE4BOSA1 $128.04 | Infineon Technologies | IGBT MOD 650V 300A 940W | Tray | Module | Chassis Mount | EconoPACK™ 4 | -40°C ~ 150°C |
![]() F3L300R07PE4PBOSA1 $119.76 | Infineon Technologies | IGBT MOD 650V 300A 20MW | Tray | Module | Chassis Mount | EconoPACK™ 4 | -40°C ~ 150°C |
![]() F3L300R12ME4B22BOSA1 $257.32 | Infineon Technologies | IGBT MOD 1200V 450A 1550W | Bulk,Tray | Module | Chassis Mount | EconoDUAL™ 3 | -40°C ~ 150°C |
![]() F3L300R12ME4B23BOSA1 $257.32 | Infineon Technologies | IGBT MOD 1200V 450A 1550W | Bulk,Tray | Module | Chassis Mount | EconoDUAL™ 3 | -40°C ~ 150°C |
![]() F3L300R12MT4B22BOSA1 $197.28 | Infineon Technologies | IGBT MOD 1200V 450A 1550W | Bulk,Tray | Module | Chassis Mount | EconoDUAL™ 3 | -40°C ~ 150°C |
![]() F3L300R12MT4B23BOSA1 $197.28 | Infineon Technologies | IGBT MOD 1200V 450A 1550W | Bulk,Tray | Module | Chassis Mount | EconoDUAL™ 3 | -40°C ~ 150°C |
![]() F3L300R12MT4PB22BPSA1 $174.01 | Infineon Technologies | IGBT MODULE MED POWER ECONO | Bulk,Tray | - | - | EconoDUAL™ 3 | - |
![]() F3L300R12MT4PB23BPSA1 $174.01 | Infineon Technologies | IGBT MOD 1200V 300A 20MW | Bulk,Tray | Module | Chassis Mount | EconoDUAL™ 3 | -40°C ~ 150°C (TJ) |
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