IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select products	Mfr	Description	Package	Supplier Device Package	Mounting Type	Series	Operating Temperature
FGY75N60SMD	onsemi	IGBT FS 600V 150A POWERTO-247-3	Tube	PowerTO-247-3	Through Hole	-	-55°C ~ 175°C (TJ)
FGY75T120SQDN $11.45	onsemi	IGBT FS 1200V 150A TO-247-3	Tube	TO-247-3	Through Hole	-	-55°C ~ 175°C (TJ)
FGY75T120SWD $6.83	onsemi	IGBT FS 1200V 150A TO-247-3	Tube	TO-247-3	Through Hole	-	-55°C ~ 175°C (TJ)
FGY75T95LQDT $6.11	onsemi	IGBT TRENCH FS 950V 150A TO-247	Tube,Tube	TO-247-3	Through Hole	-	-55°C ~ 175°C (TJ)
FGY75T95SQDT	onsemi	IGBT TRENCH FS 950V 150A TO-247	Tube	TO-247-3	Through Hole	-	-55°C ~ 175°C (TJ)
FID35-06C	IXYS	IGBT NPT 600V 38A ISOPLUS I4-PAC	Tube	ISOPLUS i4-PAC™	Through Hole	-	-55°C ~ 150°C (TJ)
FID36-06D	IXYS	IGBT NPT 600V 38A ISOPLUS I4-PAC	Tube	ISOPLUS i4-PAC™	Through Hole	-	-55°C ~ 150°C (TJ)
FID60-06D $5.75	IXYS	IGBT NPT 600V 65A ISOPLUS I4-PAC	Tube	ISOPLUS i4-PAC™	Through Hole	-	-55°C ~ 150°C (TJ)