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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| onsemi | IGBT TRENCH FS 650V 240A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) | |
![]() FGY40T120SMD $11.40 | onsemi | IGBT TRENCH FS 1200V 80A TO-247 | Tube | TO-247 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGY4L100T120SWD $8.02 | onsemi | IGBT FS 1200V 200A TO-247-4L | Tube | TO-247-4L | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGY4L140T120SWD $9.85 | onsemi | IGBT FS 1200V 200A TO-247-4L | Tube | TO-247-4L | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGY4L160T120SWD $12.82 | onsemi | IGBT FS 1200V 200A TO-247-4L | Tube | TO-247-4L | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGY4L75T120SWD $7.09 | onsemi | IGBT FS 1200V 150A TO-247-4L | Tube | TO-247-4L | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGY60T120SQDN $10.21 | onsemi | IGBT 1200V 120A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGY60T120SWD $6.46 | onsemi | IGBT FS 1200V 105A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
RGW60TS65DGC13View Product
APTGT200H120GView Product
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IXA30PG1200DHG-TUBView Product
MMIX4B20N300View Product
FB50R07W2E3B23BOMA1View Product
P2000D45X168HPSA1View Product
PCFG75T120SQFView Product
IXA40PG1200DHG-TUBView Product
FS13MR12W2M1HC55BPSA1View Product
STGSH50M120DView Product
STGWA30M65DF2AGView Product
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