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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FGPF90N30 $0.88 | Fairchild Semiconductor | IGBT 300V TO-220F-3 | Tube | TO-220F-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() FGR15N40A $0.27 | Fairchild Semiconductor | IGBT, 8A, 400V, N-CHANNEL | Bulk | - | Surface Mount | - | -40°C ~ 150°C (TJ) |
![]() FGS15N40LTF $0.47 | Fairchild Semiconductor | IGBT TRENCH 400V 8-SOIC | Bulk | 8-SOIC | Surface Mount | - | -40°C ~ 150°C (TJ) |
![]() FGY100T120RWD $11.85 | onsemi | IGBT FS 1200V 200A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGY100T120SWD $4.75 | onsemi | IGBT FS 1200V 200A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGY100T65SCDT $8.06 | onsemi | IGBT TRENCH FS 650V 200A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGY120T65SPD-F085 $13.82 | onsemi | IGBT TRENCH FS 650V 240A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGY140T120SWD $11.86 | onsemi | IGBT FS 1200V 280A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
RGW60TS65DGC13View Product
APTGT200H120GView Product
IRG4CC30FBView Product
IXA30PG1200DHG-TUBView Product
MMIX4B20N300View Product
FB50R07W2E3B23BOMA1View Product
P2000D45X168HPSA1View Product
PCFG75T120SQFView Product
IXA40PG1200DHG-TUBView Product
FS13MR12W2M1HC55BPSA1View Product
STGSH50M120DView Product
STGWA30M65DF2AGView Product
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