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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT 600V 75A TO-220-3TubeTO-220-3Through Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT FIELD STOP 600V 10A TO-220BulkTO-220-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT FIELD STOP 600V 10A TO-220TubeTO-220-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT NPT 600V 20A TO-220F-3TubeTO-220F-3Through Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT 300V 120A TO-220F-3TubeTO-220F-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT NPT 600V 30A TO-220F-3TubeTO-220F-3Through Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT 300V TO-220F-3TubeTO-220F-3Through Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT TRENCH 300V TO-220F-3TubeTO-220F-3Through Hole--55°C ~ 150°C (TJ)
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