IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select products	Mfr	Description	Package	Supplier Device Package	Mounting Type	Series	Operating Temperature
FGL60N100BNTD	onsemi	IGBT NPT/TRENCH 1000V 60A TO-264	Tube	TO-264-3	Through Hole	-	-55°C ~ 150°C (TJ)
FGL60N100BNTDTU	onsemi	IGBT NPT/TRENCH 1000V 60A TO-264	Tube	TO-264-3	Through Hole	-	-55°C ~ 150°C (TJ)
FGL60N100DTU $3.00	onsemi	IGBT TRENCH 1000V 60A TO-264-3	Tube	TO-264-3	Through Hole	-	-55°C ~ 150°C (TJ)
FGM603 $2.13	Sanken Electric USA Inc.	IGBT 600V 30A TO-3PF	Bulk	TO-3PF	Through Hole	-	-
FGM622S $2.13	Sanken Electric USA Inc.	IGBT 600V 25A TO-3PF	Tube	TO-3PF	Through Hole	-	150°C (TJ)
FGM623S $2.24	Sanken Electric USA Inc.	IGBT 600V 30A TO-3PF	Bulk	TO-3PF	Through Hole	-	150°C (TJ)
FGM633	Sanken Electric USA Inc.	IGBT TRENCH 600V 30A TO-3PF	Bulk	TO-3PF	Through Hole	-	150°C (TJ)
FGP10N60UNDF $0.84	Fairchild Semiconductor	FGP10N60UNDF - IGBT, 600V, 10A,	Bulk	-	-	*	-