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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FGI3040G2-F085 $3.80 | onsemi | IGBT 400V 41A TO-262 | Tube | TO-262 (I2PAK) | Through Hole | EcoSPARK® | -55°C ~ 175°C (TJ) |
![]() FGI3040G2-F085C $2.57 | onsemi | IGBT 400V 41A I2PAK | Tube | I2PAK (TO-262) | Surface Mount | EcoSPARK® | -55°C ~ 175°C (TJ) |
![]() FGI3236-F085 $1.89 | Fairchild Semiconductor | IGBT 360V 44A TO-262 | Bulk | TO-262 (I2PAK) | Through Hole | EcoSPARK® | -40°C ~ 175°C (TJ) |
![]() FGI40N60SFTU $3.05 | Fairchild Semiconductor | IGBT FIELD STOP 600V 80A TO-262 | Tube | TO-262 (I2PAK) | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT TRENCH FS 1200V 80A TO-264 | Tube | TO-264-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() FGL35N120FTDTU $5.15 | Fairchild Semiconductor | IGBT TRENCH FS 1200V 70A HPM F2 | Bulk | HPM F2 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() FGL40N120ANDTU $17.81 | onsemi | IGBT NPT 1200V 64A TO-264-3 | Tube,Tube | TO-264-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT NPT 1200V 64A TO-264-3 | Bulk | TO-264-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
FZ1200R17HE4PHPSA1View Product
FMG2G300LS60EView Product
APTGT75TA120PGView Product
FZ1600R17KF6CB2S1NOSA1View Product
FII30-12EView Product
AOK30B65M2View Product
IXA30PG1200DHG-TUBView Product
FII24N17AH1View Product
IXGA24N120C3View Product
IXYH90N65A5View Product
IXA20PG1200DHG-TRRView Product
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