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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT 400V 41A TO-262TubeTO-262 (I2PAK)Through HoleEcoSPARK®-55°C ~ 175°C (TJ)
onsemiIGBT 400V 41A I2PAKTubeI2PAK (TO-262)Surface MountEcoSPARK®-55°C ~ 175°C (TJ)
Fairchild SemiconductorIGBT 360V 44A TO-262BulkTO-262 (I2PAK)Through HoleEcoSPARK®-40°C ~ 175°C (TJ)
Fairchild SemiconductorIGBT FIELD STOP 600V 80A TO-262TubeTO-262 (I2PAK)Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT TRENCH FS 1200V 80A TO-264TubeTO-264-3Through Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT TRENCH FS 1200V 70A HPM F2BulkHPM F2Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT NPT 1200V 64A TO-264-3Tube,TubeTO-264-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT NPT 1200V 64A TO-264-3BulkTO-264-3Through Hole--55°C ~ 150°C (TJ)
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