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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FGHL40T65MQD $4.39 | onsemi | IGBT TRENCH FS 650V 80A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGHL40T65MQDT $4.39 | onsemi | IGBT TRENCH FS 650V 60A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGHL50T65LQDT $4.15 | onsemi | IGBT TRENCH FS 650V 80A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGHL50T65LQDTL4 $4.45 | onsemi | IGBT TRENCH FS 650V 80A TO-247 | Tube | TO-247-4L | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGHL50T65MQD $4.87 | onsemi | IGBT TRENCH FS 650V 80A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGHL50T65MQDT $5.02 | onsemi | IGBT TRENCH FS 650V 80A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGHL50T65MQDTL4 $4.44 | onsemi | IGBT TRENCH FS 650V 80A TO-247 | Tube | TO-247-4L | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGHL50T65SQ $3.92 | onsemi | IGBT 650V 100A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
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