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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FGH60N60UFDTU $3.38 | onsemi | IGBT FIELD STOP 600V 120A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT FIELD STOP 600V 120A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() FGH60N6S2 $7.23 | onsemi | IGBT 600V 75A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() FGH60T65SHD-F155 $5.12 | onsemi | IGBT TRENCH FS 650V 120A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGH60T65SQD-F155 $5.41 | onsemi | IGBT TRENCH FS 650V 120A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
| onsemi | IGBT FIELD STOP 600V 150A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() FGH75T65SHD-F155 $6.32 | onsemi | IGBT TRENCH FS 650V 150A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGH75T65SHDT-F155 $6.04 | onsemi | IGBT TRENCH FS 650V 150A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
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