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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FGH50N6S2D $9.04 | Fairchild Semiconductor | IGBT 600V 75A TO-247 | Bulk | TO-247 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() FGH50T65SQD-F155 $4.62 | onsemi | IGBT TRENCH FS 650V 100A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGH50T65UPD $6.48 | onsemi | IGBT TRENCH FS 650V 100A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
| onsemi | IGBT FIELD STOP 600V 120A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| onsemi | IGBT FIELD STOP 600V 120A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() FGH60N60SFTU $3.15 | Fairchild Semiconductor | IGBT FIELD STOP 600V 120A TO-247 | Bulk | TO-247 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() FGH60N60SMD $6.13 | onsemi | IGBT FIELD STOP 600V 120A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
| onsemi | IGBT FIELD STOP 600V 120A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
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