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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT 600V 75A TO-247-3TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT 600V 75A TO-247-3TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT TRENCH FS 1000V 80A TO-247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 1000V 80A TO-247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 1200V 80A TO-247Bulk,TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 1200V 80A TO-247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 1200V 80A TO-247TubeTO-247-4Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 1200V 160A TO-247TubeTO-247-4LThrough Hole--55°C ~ 175°C (TJ)
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