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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FGH40N6S2 $2.89 | onsemi | IGBT 600V 75A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() FGH40N6S2D $3.30 | onsemi | IGBT 600V 75A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT TRENCH FS 1000V 80A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) | |
![]() FGH40T100SMD-F155 $6.78 | onsemi | IGBT TRENCH FS 1000V 80A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGH40T120SMD $8.48 | onsemi | IGBT TRENCH FS 1200V 80A TO-247 | Bulk,Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGH40T120SMD-F155 $8.49 | onsemi | IGBT TRENCH FS 1200V 80A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
| onsemi | IGBT TRENCH FS 1200V 80A TO-247 | Tube | TO-247-4 | Through Hole | - | -55°C ~ 175°C (TJ) | |
![]() FGH40T120SQDNL4 $5.96 | onsemi | IGBT TRENCH FS 1200V 160A TO-247 | Tube | TO-247-4L | Through Hole | - | -55°C ~ 175°C (TJ) |
IKW20N65ET7XKSA1View Product
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STGSH50M120DView Product
FII24N17AH1View Product
FII50-12EView Product
FS500R17OE4DB61BPSA1View Product
CM300DX-24AView Product
ISL9V3040D3STView Product
FP15R06KL4BOMA1View Product
IXYP15N65C3D1View Product
RGS80TS65HRC11View Product
IXA20PG1200DHG-TRRView Product
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