IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select products	Mfr	Description	Package	Supplier Device Package	Mounting Type	Series	Operating Temperature
FGH30N6S2D	onsemi	IGBT 600V 45A TO-247-3	Tube	TO-247-3	Through Hole	-	-55°C ~ 150°C (TJ)
FGH30S130P $6.84	onsemi	IGBT TRENCH FS 1300V 60A TO-247	Tube	TO-247-3	Through Hole	-	-55°C ~ 175°C (TJ)
FGH30S150P	onsemi	IGBT 1500V 60A TO-247-3	Tube	TO-247-3	Through Hole	-	-55°C ~ 175°C (TJ)
FGH30T65UPDT-F155	onsemi	IGBT TRENCH FS 650V 60A TO-247-3	Tube	TO-247-3	Through Hole	-	-55°C ~ 175°C (TJ)
FGH40N120ANTU	onsemi	IGBT NPT 1200V 64A TO-247-3	Tube	TO-247-3	Through Hole	-	-
FGH40N60SFDTU $5.42	onsemi	IGBT FIELD STOP 600V 80A TO247	Tube	TO-247-3	Through Hole	-	-55°C ~ 150°C (TJ)
FGH40N60SFDTU-F085	onsemi	IGBT FIELD STOP 600V 80A TO247	Tube	TO-247-3	Through Hole	-	-55°C ~ 150°C (TJ)
FGH40N60SFTU $2.11	Fairchild Semiconductor	INSULATED GATE BIPOLAR TRANSISTO	Bulk	-	-	*	-