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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| onsemi | IGBT TRENCH 360V TO-252AA | Tape & Reel (TR) | TO-252AA | Surface Mount | - | -55°C ~ 150°C (TJ) | |
![]() FGD5T120SH $2.02 | onsemi | IGBT TRENCH FS 1200V 10A TO252AA | Tape & Reel (TR),Cut Tape (CT) | TO-252AA | Surface Mount | - | -55°C ~ 150°C (TJ) |
| Sanken Electric USA Inc. | IGBT TRENCH FS 650V 50A TO-3PF | Bulk | TO-3PF | Through Hole | - | 175°C (TJ) | |
| Sanken Electric USA Inc. | IGBT TRENCH FS 650V 50A TO-3PF | Bulk | TO-3PF | Through Hole | - | 175°C (TJ) | |
| Sanken Electric USA Inc. | IGBT TRENCH FS 650V 65A TO-3PF | Bulk | TO-3PF | Through Hole | - | 175°C (TJ) | |
| onsemi | IGBT TRENCH FS 1200V 80A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) | |
| onsemi | IGBT TRENCH FS 1200V 30A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) | |
![]() FGH20N60SFDTU $4.05 | onsemi | IGBT FIELD STOP 600V 40A TO247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
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