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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT TRENCH 360V TO-252AATape & Reel (TR)TO-252AASurface Mount--55°C ~ 150°C (TJ)
onsemiIGBT TRENCH FS 1200V 10A TO252AATape & Reel (TR),Cut Tape (CT)TO-252AASurface Mount--55°C ~ 150°C (TJ)
Sanken Electric USA Inc.IGBT TRENCH FS 650V 50A TO-3PFBulkTO-3PFThrough Hole-175°C (TJ)
Sanken Electric USA Inc.IGBT TRENCH FS 650V 50A TO-3PFBulkTO-3PFThrough Hole-175°C (TJ)
Sanken Electric USA Inc.IGBT TRENCH FS 650V 65A TO-3PFBulkTO-3PFThrough Hole-175°C (TJ)
onsemiIGBT TRENCH FS 1200V 80A TO-247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 1200V 30A TO-247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT FIELD STOP 600V 40A TO247TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
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