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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FGH40N60SMD $4.80 | onsemi | IGBT FIELD STOP 600V 80A TO247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGH40N60SMD-F085 $6.59 | onsemi | IGBT FIELD STOP 600V 80A TO247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
| onsemi | IGBT FIELD STOP 600V 80A TO247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) | |
| onsemi | IGBT FIELD STOP 600V 80A TO247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) | |
![]() FGH40N60UFDTU $4.84 | onsemi | IGBT FIELD STOP 600V 80A TO247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT FIELD STOP 600V 80A TO247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| onsemi | IGBT FIELD STOP 650V 80A TO247 | Tube,Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| onsemi | IGBT FIELD STOP 650V 80A TO247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
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MSCGL40X120T3AGView Product
IXGP12N60CView Product
FII30-12EView Product
IRG7PH50UPBFView Product
F4-50R07W2H3_B51View Product
BSM20GD60DLCE3224View Product
FII24N17AH1View Product
FP50R12N2T7B11BPSA2View Product
IXA40RG1200DHG-TRRView Product
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