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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FGH75T65SHDTL4 $6.29 | onsemi | IGBT FIELD STOP 650V 150A TO247 | Tube | TO-247-4 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGH75T65SHDTLN4 $4.07 | onsemi | IGBT TRENCH FS 650V 150A TO-247 | Bulk,Tube,Tube | TO-247-4 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGH75T65SQD-F155 $6.00 | onsemi | IGBT TRENCH FS 650V 150A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGH75T65SQDNL4 $8.08 | onsemi | IGBT TRENCH FS 650V 200A TO-247 | Tube | TO-247-4L | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGH75T65SQDT-F155 $6.07 | onsemi | IGBT TRENCH FS 650V 150A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
| onsemi | IGBT TRENCH FS 650V 150A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) | |
![]() FGH75T65SQDTL4 $6.43 | onsemi | IGBT TRENCH FS 650V 150A TO-247 | Tube | TO-247-4 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGH75T65UPD $6.55 | onsemi | IGBT TRENCH FS 650V 150A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
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