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FZ1200R17HE4PHPSA1View Product
IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
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| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| IXYS | IGBT H BRIDGE 1700V 18A I4PAK5 | Tube | ISOPLUS i4-PAC™ | Through Hole | - | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT H BRIDGE 1700V 18A I4PAK5 | Box | ISOPLUS i4-PAC™ | Through Hole | - | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT H BRIDGE 1700V 18A I4PAK5 | Box | ISOPLUS i4-PAC™ | Through Hole | - | - | |
 FII30-06D $5.42 | IXYS | IGBT H BRIDGE 600V 30A I4PAK5 | Tube | ISOPLUS i4-PAC™ | Through Hole | - | -55°C ~ 150°C (TJ) |
| IXYS | IGBT H BRIDGE 1200V 33A I4PAK5 | Tube | ISOPLUS i4-PAC™ | Through Hole | - | -55°C ~ 150°C (TJ) | |
 FII40-06D $5.95 | IXYS | IGBT H BRIDGE 600V 40A I4PAK5 | Bulk | ISOPLUS i4-PAC™ | Through Hole | - | -55°C ~ 150°C (TJ) |
| IXYS | IGBT H BRIDGE 1200V 50A I4PAK5 | Tube | ISOPLUS i4-PAC™ | Through Hole | - | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT NPT 1200V 50A ISOPLUS I4PAC | Tube | ISOPLUS i4-PAC™ | Through Hole | - | -55°C ~ 150°C (TJ) |
