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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT 650V 83A TO247-3TubePG-TO247-3Through Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 1200V 75A TO247-3Tube,TubePG-TO247-3-1Through HoleTrenchStop®-40°C ~ 150°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 600V 80A TO247-3Tube,TubePG-TO247-3-1Through HoleTrenchStop®-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 650V 80A TO247-3TubePG-TO247-3Through HoleTrenchStop®-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 650V 100A TO247-3TubePG-TO247-3Through Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH 1200V 30A TO247HC-3TubePG-TO247HC-3Through HoleTrenchStop®-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH 1200V 40A TO247HC-3TubePG-TO247HC-3Through HoleTrenchStop®-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH 1350V 40A TO247HC-3TubePG-TO247HC-3Through HoleTrenchStop®-40°C ~ 175°C (TJ)
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