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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT TRENCH FS 1200V 150A TO247TubePG-TO247-3-46Through HoleTrenchStop™-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH 1200V 154A TO247-46TubePG-TO247-3-46Through HoleTRENCHSTOP™-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 1200V 150A TO247TubePG-TO247-3-46Through HoleTrenchStop™-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 750V 150A TO247-3-51TubePG-TO247-3-51Through Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 750V 200A TO247-3-51TubePG-TO247-3-51Through Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 750V 200A TO247-3-51TubePG-TO247-3-51Through Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH 600V 8A TO251-3BulkPG-TO251-3Through HoleTrenchStop®-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH 600V 12A TO251-3BulkPG-TO251-3Through HoleTrenchStop®-
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