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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IRG4BC20S $1.21 | Infineon Technologies | IGBT 600V 19A TO-220AB | Tube | TO-220AB | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() IRG4BC20SD $1.77 | Infineon Technologies | IGBT 600V 19A TO-220AB | Tube | TO-220AB | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() IRG4BC20SD-S $2.85 | Infineon Technologies | IGBT 600V 19A 60W D2PAK | Tube | D2PAK | Surface Mount | - | -55°C ~ 150°C (TJ) |
![]() IRG4BC20SD-SPBF $0.97 | International Rectifier | IGBT 600V 19A D2PAK | Bulk | D2PAK | Surface Mount | - | -55°C ~ 150°C (TJ) |
| Infineon Technologies | IGBT 600V 19A TO-220AB | Tube | TO-220AB | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT 600V 19A TO-220AB | Tube | TO-220AB | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT 600V 19A TO-220AB | Tube | TO-220AB | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() IRG4BC20U $0.80 | Infineon Technologies | IGBT 600V 13A TO-220AB | Tube | TO-220AB | Through Hole | - | -55°C ~ 150°C (TJ) |

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