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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IRG4BC20F-S $2.18 | Infineon Technologies | IGBT 600V 16A TO-220AB | Tube | TO-220AB | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() IRG4BC20FD $2.19 | Infineon Technologies | IGBT 600V 16A TO-220AB | Tube | TO-220AB | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() IRG4BC20FD-S $2.45 | Infineon Technologies | IGBT 600V 16A 60W D2PAK | Tube | D2PAK | Surface Mount | - | -55°C ~ 150°C (TJ) |
![]() IRG4BC20FD-SPBF $2.34 | Infineon Technologies | IGBT 600V 16A 60W D2PAK | Tube | D2PAK | Surface Mount | - | -55°C ~ 150°C (TJ) |
| Infineon Technologies | IGBT 600V 16A TO-220AB | Tube | TO-220AB | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT 600V 16A TO-220AB | Tube | TO-220AB | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() IRG4BC20K $2.12 | Infineon Technologies | IGBT 600V 16A TO-220AB | Tube | TO-220AB | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() IRG4BC20KD $1.53 | Infineon Technologies | IGBT 600V 16A TO-220AB | Tube | TO-220AB | Through Hole | - | -55°C ~ 150°C (TJ) |

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