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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IQFH68N06NM5ATMA1 $2.60 | Infineon Technologies | TRENCH 40<-<100V | Tape & Reel (TR) | - | - | - | - |
![]() IQFH86N06NM5ATMA1 $2.30 | Infineon Technologies | TRENCH 40<-<100V | Tape & Reel (TR) | - | - | - | - |
![]() IQFH99N06NM5ATMA1 $2.00 | Infineon Technologies | TRENCH 40<-<100V | Tape & Reel (TR) | - | - | - | - |
![]() IRF7805ZTRPBFXTMA1 $0.34 | Infineon Technologies | TRENCH <= 40V | Tape & Reel (TR) | - | - | - | - |
![]() IRFB4127PBFXKMA1 $1.22 | Infineon Technologies | TRENCH >=100V | Tube | - | - | - | - |
| Infineon Technologies | IGBT 600V 55A SUPER-220 | Tube | SUPER-220™ (TO-273AA) | Through Hole | - | - | |
| Infineon Technologies | IGBT 600V 9A TO-220AB | Tube | TO-220AB | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT 600V 9A TO-220AB | Tube | TO-220AB | Through Hole | - | -55°C ~ 150°C (TJ) |

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