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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesTRENCH 40<-<100VTape & Reel (TR)----
Infineon TechnologiesTRENCH 40<-<100VTape & Reel (TR)----
Infineon TechnologiesTRENCH 40<-<100VTape & Reel (TR)----
Infineon TechnologiesTRENCH <= 40VTape & Reel (TR)----
Infineon TechnologiesTRENCH >=100VTube----
Infineon TechnologiesIGBT 600V 55A SUPER-220TubeSUPER-220™ (TO-273AA)Through Hole--
Infineon TechnologiesIGBT 600V 9A TO-220ABTubeTO-220ABThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 600V 9A TO-220ABTubeTO-220ABThrough Hole--55°C ~ 150°C (TJ)
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