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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
International RectifierIGBT 1200V 78A SUPER-247BulkSUPER-247™ (TO-274AA)Through Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 1200V 78A SUPER-247BagSUPER-247™ (TO-274AA)Through Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 1200V 99A SUPER-247BagSUPER-247™ (TO-274AA)Through Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 1200V 99A SUPER-247BagSUPER-247™ (TO-274AA)Through Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 1200V 99A SUPER-247TubeSUPER-247™ (TO-274AA)Through Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 1200V 99A SUPER-247BagSUPER-247™ (TO-274AA)Through Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 600V 9A TO-252AATubeTO-252AA (DPAK)Surface Mount--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 600V 9A TO-252AATubeTO-252AA (DPAK)Surface Mount--55°C ~ 150°C (TJ)
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