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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
International RectifierIGBT 600V 8.5A DPAKBulkDPAKSurface Mount--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 600V 22A TO-252AATubeTO-252AA (DPAK)Surface Mount--55°C ~ 150°C (TJ)
International RectifierIGBT 600V 22A DPAKBulkDPAKSurface Mount--55°C ~ 150°C (TJ)
International RectifierIGBT 600V 22A DPAKBulkDPAKSurface Mount--55°C ~ 150°C (TJ)
International RectifierIGBT 600V 22A DPAKBulkDPAKSurface Mount--55°C ~ 150°C (TJ)
International RectifierIGBT TRENCH 330V 70A TO-220ABBulkTO-220ABThrough Hole--40°C ~ 150°C (TJ)
Infineon TechnologiesIGBT TRENCH 330V 24A TO-220ABTubeTO-220ABThrough Hole--40°C ~ 150°C (TJ)
Infineon TechnologiesIGBT TRENCH 330V 28A TO220AB FPTubeTO-220AB Full-PakThrough Hole--40°C ~ 150°C (TJ)
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