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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT TRENCH 600V 25A TO220AB FPTubeTO-220AB Full-PakThrough Hole--40°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 1200V ULTRA FAST DIEBulk----
Infineon TechnologiesIGBT 1200V ULTRA FAST DIEBulkDieSurface Mount--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 1200V ULTRA FAST DIEBulkDieSurface Mount--40°C ~ 175°C (TJ)
International RectifierIGBT TRENCH 1000V 55A TO-247ADBulkTO-247ADThrough Hole--55°C ~ 175°C (TJ)
International RectifierIGBT TRENCH 1000V 55A TO-247ACBulkTO-247ACThrough Hole--55°C ~ 175°C (TJ)
International RectifierIGBT TRENCH 1000V 85A TO-247ADBulkTO-247ADThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT TRENCH 1000V 85A TO-247ACTubeTO-247ACThrough Hole--55°C ~ 150°C (TJ)
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