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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT TRENCH 1200V 30A TO-247ADTubeTO-247ADThrough Hole--55°C ~ 150°C (TJ)
International RectifierIGBT TRENCH 1200V 30A TO-247ACBulkTO-247ACThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT TRENCH 1200V 30A TO-247ACTubeTO-247ACThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT TRENCH 1200V 33A TO-247ACTubeTO-247ACThrough Hole--55°C ~ 175°C (TJ)
International RectifierIGBT TRENCH 1200V 55A TO-247ADBulkTO-247ADThrough Hole--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 1200V ULTRA FAST TO247Tube----
International RectifierIGBTBulk--*-
International RectifierIGBT TRENCH 1200V 50A TO-247ADBulkTO-247ADThrough Hole--55°C ~ 150°C (TJ)
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