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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Infineon Technologies | IGBT TRENCH 1200V 30A TO-247AD | Tube | TO-247AD | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() IRG7PH28UD1PBF $1.86 | International Rectifier | IGBT TRENCH 1200V 30A TO-247AC | Bulk | TO-247AC | Through Hole | - | -55°C ~ 150°C (TJ) |
| Infineon Technologies | IGBT TRENCH 1200V 30A TO-247AC | Tube | TO-247AC | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT TRENCH 1200V 33A TO-247AC | Tube | TO-247AC | Through Hole | - | -55°C ~ 175°C (TJ) | |
![]() IRG7PH35U-EP $2.58 | International Rectifier | IGBT TRENCH 1200V 55A TO-247AD | Bulk | TO-247AD | Through Hole | - | -55°C ~ 175°C (TJ) |
| Infineon Technologies | IGBT 1200V ULTRA FAST TO247 | Tube | - | - | - | - | |
![]() IRG7PH35UD-EP $3.94 | International Rectifier | IGBT | Bulk | - | - | * | - |
![]() IRG7PH35UD1-EP $3.07 | International Rectifier | IGBT TRENCH 1200V 50A TO-247AD | Bulk | TO-247AD | Through Hole | - | -55°C ~ 150°C (TJ) |

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