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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT 1200V ULTRA FAST TO247Tube----
Infineon TechnologiesIGBT TRENCH 1200V 85A TO-247ADTubeTO-247ADThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT TRENCH 1200V 85A TO-247ADTubeTO-247ADThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT TRENCH 1200V 85A TO-247ACTubeTO-247ACThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT TRENCH 1200V 60A TO-247ACTubeTO-247ACThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT TRENCH 1200V 85A TO-247ACTubeTO-247ACThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT TRENCH 1200V 90A TO-247ACTubeTO-247ACThrough Hole--55°C ~ 175°C (TJ)
International RectifierIGBT 1200V 70A TO-247ADBulkTO-247ADThrough Hole--40°C ~ 150°C (TJ)
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