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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT 1200V 20A TO-247ACBagTO-247ACThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 1200V 20A TO-247ACBagTO-247ACThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 1200V 20A TO-247ACTubeTO-247ACThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 1200V 20A TO-247ACTubeTO-247ACThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 1200V 30A TO-247ACBagTO-247ACThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 1200V 30A TO-247ACTubeTO-247ACThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 1200V 30A TO-247ACTubeTO-247ACThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 1200V 41A TO-247ACBagTO-247ACThrough Hole--55°C ~ 150°C (TJ)
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