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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
International RectifierIGBT NPT 600V 47A TO220 FPTubePG-TO220 Full PackThrough Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT NPT 600V 65A TO220-3TubePG-TO220-3Through Hole--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT NPT 600V 11A TO220AB FPTubeTO-220AB Full-PakThrough Hole--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT NPT 600V 11A TO220AB FPTubeTO-220AB Full-PakThrough Hole--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 600V 11A TO220 FPBulkTO220 Full PackThrough Hole--55°C ~ 175°C (TJ)
International RectifierIGBT NPT 600V 12A TO220AB FPBulkTO-220AB Full-PakThrough Hole--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT NPT 1200V 40A TO-247ADTubeTO-247ADThrough Hole--55°C ~ 150°C (TJ)
International RectifierIGBT NPT 1200V 40A TO-247ADBulkTO-247ADThrough Hole--55°C ~ 150°C (TJ)
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