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Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
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| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Infineon Technologies | IGBT NPT 600V 40A TO-247AC | Tube | TO-247AC | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT NPT 1200V 60A TO-247AD | Tube | TO-247AD | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT NPT 1200V 60A TO-247AC | Bag | TO-247AC | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT NPT 600V 60A TO-247AD | Tube | TO-247AD | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT NPT 600V 60A TO-247AD | Tube | TO-247AD | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT NPT 600V 60A TO-247AC | Tube | TO-247AC | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT 250V 104A TO-247AC | Bag | TO-247AC | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT 250V 104A TO-247AC | Bag | TO-247AC | Through Hole | - | -55°C ~ 150°C (TJ) |
