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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT 1200V TO247-3Tube----
Infineon TechnologiesIGBT 600V TO-247 COPAKTube----
Infineon TechnologiesIGBT TRENCHBulk----
Infineon TechnologiesIGBT TRENCHBulk----
Bourns Inc.IGBT TRENCH FS 600V 10A TO-252Tape & Reel (TR),Cut Tape (CT)TO-252 (DPAK)Surface Mount--55°C ~ 150°C (TJ)
Bourns Inc.IGBT TRENCH FS 600V 60A TO-247NTubeTO-247N-3LThrough Hole--55°C ~ 150°C (TJ)
Bourns Inc.IGBT TRENCH FS 600V 40A TO-247TubeTO-247Through Hole--55°C ~ 150°C (TJ)
Bourns Inc.IGBT TRENCH FS 600V 60A TO-247TubeTO-247Through Hole--55°C ~ 150°C (TJ)
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