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Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 BIDW40N65ES5 $4.96 | Bourns Inc. | IGBT TRENCH FS 650V 80A TO-247 | Tube | TO-247 | Through Hole | - | -40°C ~ 175°C (TJ) |
BIDW40N65H5 $4.96 | Bourns Inc. | IGBT TRENCH FS 650V 80A TO-247 | Tube | TO-247 | Through Hole | - | -40°C ~ 175°C (TJ) |
BIDW50N65T $4.29 | Bourns Inc. | IGBT TRENCH FS 650V 100A TO-247 | Tube | TO-247 | Through Hole | - | -55°C ~ 150°C (TJ) |
BIDW75N65EH5 $6.53 | Bourns Inc. | IGBT TRENCH FS 650V 150A TO-247 | Tube | TO-247 | Through Hole | - | -40°C ~ 175°C (TJ) |
BIDW75N65ES5 $6.53 | Bourns Inc. | IGBT TRENCH FS 650V 150A TO-247 | Tube | TO-247 | Through Hole | - | -40°C ~ 175°C (TJ) |
 BSM300GA160DN13CB7HOSA1 $110.20 | Infineon Technologies | BSM300GA160 - INSULATED GATE BIP | Bulk | - | - | * | - |
 BUP213 $1.56 | Infineon Technologies | IGBT 1200V 32A TO-220AB | Tube | TO-220AB | Through Hole | - | -55°C ~ 150°C (TJ) |
| Microchip Technology | ST-IGBT-SBD-6HPD | Bulk | - | - | - | - |
