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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Sanken Electric USA Inc.IGBT 425V 15A TO-252Tape & Reel (TR)TO-252Surface Mount-150°C (TJ)
Sanken Electric USA Inc.IGBT 425V 15A TO-252Tape & Reel (TR)TO-252Surface Mount-150°C (TJ)
Diodes IncorporatedIGBT FIELD STOP 1200V 50A TO-247TubeTO-247Through Hole--40°C ~ 175°C (TJ)
Diodes IncorporatedIGBT FIELD STOP 1200V 80A TO-247TubeTO-247Through Hole--55°C ~ 150°C (TJ)
Diodes IncorporatedIGBT FIELD STP 650V 30A ITO220ABTubeITO-220ABThrough Hole--40°C ~ 175°C (TJ)
Diodes IncorporatedIGBT FIELD STOP 650V 80A TO-247TubeTO-247Through Hole--40°C ~ 175°C (TJ)
Diodes IncorporatedIGBT FIELD STOP 650V 80A TO-247TubeTO-247Through Hole--40°C ~ 175°C (TJ)
Diodes IncorporatedIGBT FIELD STOP 650V 100A TO-247TubeTO-247Through Hole--40°C ~ 175°C (TJ)
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