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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Sanken Electric USA Inc. | IGBT 425V 15A TO-252 | Tape & Reel (TR) | TO-252 | Surface Mount | - | 150°C (TJ) | |
| Sanken Electric USA Inc. | IGBT 425V 15A TO-252 | Tape & Reel (TR) | TO-252 | Surface Mount | - | 150°C (TJ) | |
![]() DGTD120T25S1PT $6.18 | Diodes Incorporated | IGBT FIELD STOP 1200V 50A TO-247 | Tube | TO-247 | Through Hole | - | -40°C ~ 175°C (TJ) |
| Diodes Incorporated | IGBT FIELD STOP 1200V 80A TO-247 | Tube | TO-247 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() DGTD65T15H2TF $2.42 | Diodes Incorporated | IGBT FIELD STP 650V 30A ITO220AB | Tube | ITO-220AB | Through Hole | - | -40°C ~ 175°C (TJ) |
| Diodes Incorporated | IGBT FIELD STOP 650V 80A TO-247 | Tube | TO-247 | Through Hole | - | -40°C ~ 175°C (TJ) | |
| Diodes Incorporated | IGBT FIELD STOP 650V 80A TO-247 | Tube | TO-247 | Through Hole | - | -40°C ~ 175°C (TJ) | |
| Diodes Incorporated | IGBT FIELD STOP 650V 100A TO-247 | Tube | TO-247 | Through Hole | - | -40°C ~ 175°C (TJ) |

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