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Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 FGA180N30DTU $3.71 | Fairchild Semiconductor | IGBT 300V 180A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT TRENCH 330V 180A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) | |
| onsemi | IGBT TRENCH FS 1200V 40A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) | |
FGA20S120M $1.91 | Fairchild Semiconductor | IGBT TRENCH FS 1200V 40A TO-3P | Bulk | TO-3P | Through Hole | - | -55°C ~ 175°C (TJ) |
 FGA20S125P $1.67 | onsemi | IGBT TRENCH FS 1250V 40A TO-3PN | Tube | TO-3PN | Through Hole | - | - |
FGA20S125P-SN00336 $3.38 | onsemi | IGBT TRENCH 1250V 40A TO-3PN | Tube,Tube | TO-3PN | Through Hole | - | -55°C ~ 175°C (TJ) |
| onsemi | IGBT TRENCH FS 1400V 40A TO-3PN | Tube | TO-3PN | Through Hole | - | -55°C ~ 175°C (TJ) | |
 FGA25N120ANDTU $2.00 | onsemi | IGBT NPT 1200V 40A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) |
