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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT TRENCH FS 650V 80A TO-3PNTubeTO-3PNThrough Hole--55°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 650V 80A TO-3PNTubeTO-3PNThrough Hole--55°C ~ 175°C (TJ)
onsemiIGBT NPT 650V 80A TO-3PNTubeTO-3PNThrough Hole--55°C ~ 175°C (TJ)
Fairchild SemiconductorIGBT TRENCH FS 650V 100A TO-3PNBulkTO-3PNThrough Hole--55°C ~ 175°C (TJ)
onsemiIGBT NPT/TRENCH 1000V 50A TO-3PTubeTO-3PThrough Hole--55°C ~ 150°C (TJ)
onsemiIGBT NPT/TRENCH 1000V 50A TO-3PTubeTO-3PThrough Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT NPT/TRENCH 1000V 50A TO-3PTubeTO-3PThrough Hole--55°C ~ 150°C (TJ)
onsemiIGBT 600V 100A TO-3PTubeTO-3PThrough Hole--55°C ~ 150°C (TJ)
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