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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FGA70N30TDTU $1.50 | Fairchild Semiconductor | IGBT TRENCH 300V TO-3PN | Tube | TO-3PN | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() FGA70N30TTU $2.14 | Fairchild Semiconductor | IGBT TRENCH 300V TO-3PN | Tube | TO-3PN | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT TRENCH 330V TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() FGA90N30DTU $2.14 | Fairchild Semiconductor | IGBT, 90A, 300V, N-CHANNEL | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() FGA90N30TU $0.98 | Fairchild Semiconductor | IGBT 300V 90A TO3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() FGA90N33ATDTU $1.28 | onsemi | IGBT TRENCH 330V 90A TO3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() FGA90N33ATTU $1.45 | onsemi | IGBT TRENCH 330V 90A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() FGAF20N60SMD $1.84 | Fairchild Semiconductor | INSULATED GATE BIPOLAR TRANSISTO | Bulk | - | - | * | - |

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