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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Fairchild SemiconductorIGBT TRENCH 300V TO-3PNTubeTO-3PNThrough Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT TRENCH 300V TO-3PNTubeTO-3PNThrough Hole--55°C ~ 150°C (TJ)
onsemiIGBT TRENCH 330V TO-3PTubeTO-3PThrough Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT, 90A, 300V, N-CHANNELTubeTO-3PThrough Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT 300V 90A TO3PTubeTO-3PThrough Hole--55°C ~ 150°C (TJ)
onsemiIGBT TRENCH 330V 90A TO3PTubeTO-3PThrough Hole--55°C ~ 150°C (TJ)
onsemiIGBT TRENCH 330V 90A TO-3PTubeTO-3PThrough Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTOBulk--*-
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