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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FGA50S110P $1.41 | Fairchild Semiconductor | IGBT TRENCH FS 1100V 50A TO-3PN | Bulk | TO-3PN | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGA50T65SHD $4.74 | onsemi | IGBT TRENCH FS 650V 100A TO-3PN | Tube | TO-3PN | Through Hole | - | -55°C ~ 175°C (TJ) |
| onsemi | IGBT TRENCH FS 650V 120A TO-3PN | Tube | TO-3PN | Through Hole | - | -55°C ~ 175°C (TJ) | |
| onsemi | IGBT FIELD STOP 600V 120A TO-3PN | Tube | TO-3PN | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() FGA60N65SMD $5.56 | onsemi | IGBT FIELD STOP 650V 120A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGA6530WDF $1.79 | onsemi | IGBT TRENCH FS 650V 60A TO-3PN | Tube,Tube | TO-3PN | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGA6540WDF $1.46 | onsemi | IGBT TRENCH FS 650V 80A TO-3PN | Tube,Tube,Tube | TO-3PN | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGA6560WDF $2.35 | onsemi | IGBT TRENCH FS 650V 120A TO-3PN | Bulk,Tube,Tube | TO-3PN | Through Hole | - | -55°C ~ 175°C (TJ) |

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