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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Fairchild SemiconductorIGBT TRENCH FS 600V 60A TO-3PBulkTO-3PThrough Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT FIELD STOP 650V 60A TO-3PNBulkTO-3PNThrough Hole--55°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 1300V 60A TO-3PNTubeTO-3PNThrough Hole--55°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 650V 60A TO-3PNTube,TubeTO-3PNThrough Hole--55°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 600V 80A TO-3PNTubeTO-3PNThrough Hole--55°C ~ 175°C (TJ)
Fairchild SemiconductorIGBT, 40A, 600V, N-CHANNELTubeTO-3PThrough Hole--55°C ~ 150°C (TJ)
onsemiIGBT FIELD STOP 650V 80A TO-3PNTubeTO-3PNThrough Hole--55°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 650V 80A TO-3PNTubeTO-3PNThrough Hole--55°C ~ 175°C (TJ)
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