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Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 F5L200R12N3H3BPSA1 $66.09 | Infineon Technologies | F5L200R12 = IGBT MODULE | Bulk | - | - | * | - |
FD1200R12IE4B1S1BDMA1 $957.75 | Infineon Technologies | FD1200R12IE4B1S1BD - IGBT | Bulk | - | - | * | - |
 FGA120N30DTU $1.29 | Fairchild Semiconductor | IGBT 300V 120A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT NPT 1200V 24A TO-3PN | Tube | TO-3PN | Through Hole | - | -55°C ~ 150°C (TJ) | |
 FGA15N120ANTDTU $1.46 | onsemi | IGBT NPT/TRENCH 1200V 30A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT NPT/TRENCH 1200V 30A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) | |
| onsemi | IGBT TRENCH FS 1200V 30A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) | |
| onsemi | IGBT TRENCH 1250V 30A TO-3P | Tube | TO-3P | Through Hole | - | -55°C ~ 175°C (TJ) |
