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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Diodes IncorporatedIGBT FIELD STOP 650V 100A TO-247TubeTO-247Through Hole--40°C ~ 175°C (TJ)
Diotec SemiconductorIGBT, TO-247-4L, N-FAST, 650 V,TubeTO-247-4Through Hole--40°C ~ 175°C (TJ)
Diotec SemiconductorIGBT TRENCH FS 1350V 60A TO-247TubeTO-247Through Hole--55°C ~ 150°C (TJ)
Diotec SemiconductorIGBT TRENCH FS 600V 60A TO-247TubeTO-247Through Hole--40°C ~ 150°C (TJ)
Diotec SemiconductorIGBT TRENCH FS 1350V 80A TO-247TubeTO-247Through Hole--55°C ~ 175°C (TJ)
Diotec SemiconductorIGBT TRENCH FS 1200V 80A TO-247TubeTO-247Through Hole--40°C ~ 175°C (TJ)
Diotec SemiconductorIGBT TRENCH FS 650V 100A TO-247TubeTO-247Through Hole--55°C ~ 175°C (TJ)
Diotec SemiconductorIGBT TRENCH FS 650V 90A TO-247TubeTO-247Through Hole--40°C ~ 175°C (TJ)
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