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Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 FGH75T65SQDT-F155 $6.07 | onsemi | IGBT TRENCH FS 650V 150A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
| onsemi | IGBT TRENCH FS 650V 150A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) | |
 FGH75T65SQDTL4 $6.43 | onsemi | IGBT TRENCH FS 650V 150A TO-247 | Tube | TO-247-4 | Through Hole | - | -55°C ~ 175°C (TJ) |
 FGH75T65UPD $6.55 | onsemi | IGBT TRENCH FS 650V 150A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
FGH75T65UPD-F085 $8.53 | onsemi | IGBT TRENCH FS 650V 150A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
 FGH75T65UPD-F155 $2.92 | onsemi | IGBT TRENCH FS 650V 150A TO-247 | Tube | TO-247 | Through Hole | - | -55°C ~ 175°C (TJ) |
FGH80N60FD2TU $2.00 | onsemi | IGBT FIELD STOP 600V 80A TO247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT FIELD STOP 600V 80A TO247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
